A plasma system optimised or set up for sputtering. For sputtering, the working electrode is coupled with the generator but capacitively separated by means of a capacitor. The substrate or target is mounted on the working electrode. The sputter system is preferably operated with an HF generator at 13.56 MHz. As a process gas, argon is used in most cases. In a system designed in this way, material is removed from the substrate or target by ion etching.