DRIE
Deep Reactive Ion Etching. Anisotropic reactive ion etching in silicon with etching depth of max. 100 µm. By passivation of the trench walls, an extremely high aspect ratio is achieved.
Deep Reactive Ion Etching. Anisotropic reactive ion etching in silicon with etching depth of max. 100 µm. By passivation of the trench walls, an extremely high aspect ratio is achieved.
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