DRIE

Deep Reactive Ion Etching. Anisotropic reactive ion etching in silicon with etching depth of max. 100 µm. By passivation of the trench walls, an extremely high aspect ratio is achieved.

back to glossary

+49 7458 99931-0

Get an expert on the phone

info@plasma.com

Write us what we can do for you

Request a quotation

You know exactly what you’re looking for